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| S T U/D3525NLS S amHop Microelectronics C orp. Aug 06,2005 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S (mW) ID 35A R DS (ON) Max S uper high dense cell design for low R DS (ON). 16 @ V G S = 10V 25 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ TC=25 C S ymbol Vspike C VDS VGS ID IDM IS PD TJ, TS TG Limit 30 25 20 35 75 20 50 -55 to 175 Unit V V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S T U/D3525NLS E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS a Condition VGS = 0V, ID = 250uA VDS = 20V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 20A VGS =4.5V, ID= 10A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A Min Typ C Max Unit 25 1 V uA 100 nA 1 1.7 12 18 30 17 800 210 120 3 11 18 27 10 15.5 8.2 2.2 4.3 3 16 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS Gate Threshold Voltage VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg b Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 25 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =15V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 1 A VGS = 10V R GE N = 6 ohm VDS =15V, ID =10A,VGS =10V VDS =15V, ID =10A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =15V, ID = 10A VGS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T U/D3525NLS E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = 10A Min Typ Max Unit 0.97 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. c.Garanted when extemal R g=6 0hm and tf < tfmax 50 V G S =5V V G S =10V V G S =8V 20 V G S =4.5V 15 T j=125 C 10 -55 C 40 ID, Drain C urrent(A) 30 V G S =4V 20 10 V G S =3V 0 0 0.5 1 1.5 2 2.5 3 ID, Drain C urrent (A) 5 25 C 0 0 0.7 1.4 2.1 2.8 3.5 4.2 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 30 1.6 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 25 1.4 1.2 1.0 0.8 0.6 0.4 -55 V G S =10V ID=20A R DS (on) (m W) V G S =4.5V 20 15 10 5 0 V G S =10V V G S =4.5V ID=10A 0 10 20 30 40 50 -25 0 25 50 75 100 125 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance vs J unction Temperature 3 S T U/D3525NLS B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 54 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=20A Is , S ource-drain current (A) 45 10.0 125 C 25 C R DS (on) (m W) 36 70 C 27 125 C 18 9 0 25 C 70 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D3525NLS 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =15V ID=20A 1000 C , C apacitance (pF ) C is s 800 600 400 200 0 C rs s 0 5 10 15 20 25 30 C os s 6 0 3 6 9 12 15 18 21 24 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 220 S witching T ime (ns ) 100 80 ID, Drain C urrent (A) 100 60 10 10 1 1 V DS =15V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 RD S Tr Tf (O T D(off) N) T D(on) 1m s 1 1 0 0 ms 0m 1s s DC L im it 1 10 30 60 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T U/D3525NLS V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 S T U/D3525NLS 7 S T U/D3525NLS 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 8 S T U/D3525NLS TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 9 |
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